bias resistor t ransistor npn silicon surface mount t ransistor with monolithic bias resistor network device marking and resistor values device marking r1 (k) r2 (k) shipping e4 1 1 3000/tape & reel leshan radio company, ltd. ? 10000/tape & reel we declare that the material of product compliance with rohs requirements. ldtd113elt1g 1 ) b u i l t- in b i as res i st ors e n a b l e th e co nfi g ur ati on of a n in ve rte r circui t w i thou t con n e cting ex te rn al in pu t resistors (see equivalent circuit). 2 ) t he bi as r e s i sto r s c o n s ist of th i n -fi l m r e s i sto r s w i t h co mp le te i s ol a t i o n to al low posi t i v e bia s ing o f the i npu t. t h ey a l so ha ve the ad van t age of a l mo st co mpl e tely eliminating p a rasitic ef fect s. 3 ) o n l y th e on/ of f co n d it i ons n e ed to be set for o p e r a t i on, making the device design easy . inverter , interface, driver features ? ? applications ldtd113elt1g ldtd113elt3g e4 1 1 z a b solute maximum ratings (t a= 25 c) z electrical ch aracteristics (t a= 25 c) 3 collec t or 2 emitter 1 base r1 r2 parameter symbol v i(off) v i(on) v o(on) i i i o(off) r 1 g i r 2 /r 1 f t min. ? 3 ? ? ? 0.7 33 0.8 ? ? ? 0.1 ? ? 1 ? 1 200 0.5 ? 0.3 7.2 0.5 1.3 ? 1.2 ? v v cc = 5v, i o = 100 a v o = 0.3v, i o = 20ma i o /i i = 50ma/2.5ma v i = 5v v cc = 50v, v i = 0v v o = 5v, i o = 50ma v ce = 10v, i e = ? 50ma, f = 100mhz ? v ma a k ? ? ?? ? mhz typ. max. unit conditions ? characteristics of built-in transistor input voltage output voltage input current output current dc current gain input resistance resistance ratio transition frequency 1 2 3 sot-23 limits parameter symbol v cc 50 ? 10 to + 10 500 200 150 ? 55 to + 150 v v in v ma mw c c i c pd tj tstg unit supply voltage input voltage output current power dissipation junction temperature storage temperature rev.o 1/3 s-ldtd113elt1g ? s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-ldtd113elt1g s-ldtd113elt3g
leshan radio company, ltd. z electrical ch aracteristic cu rv es ldtd113elt1g input voltage : v i(on) (v) output current : i o (a) v o = 0.3v 500 1m 2m 5m 10m 20m 50m 100m 200m 500m 2 1 500m 200m 100m 100 50 20 10 5 25 c 100 c ta = ? 40 c fig.1 input voltage vs. output current (on characteristics) input voltage : v i(off) (v) output current : io (a) v cc = 5v 0.5 1.0 1.5 2.0 2.5 3.0 0 10m 5m 2m 1m 500 200 100 50 20 10 5 1 2 ta = 100 c 25 c ? 40 c fig.2 output current vs. input voltage (off characteristics) output current : i o (a) dc current gain : g i v o = 5v 1m 500 2m 5m 10m 20m 50m 500m 100m 200m 1k 500 200 100 50 20 10 5 2 1 ta = 100 c 25 c ? 40 c fig.3 dc current gain vs. output current output current : i o (a) output voltage : v o(on) (v) l o /l i = 20 500 1m 2m 5m 10m 20m 50m 500m 100m 200m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 25 c ? 40 c ta = 100 c fig.4 output voltage vs. output current rev.o 2/3 ;s-ldtd113elt1g
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 rev.o 3/3 ldtd113elt1g ;s-ldtd113elt1g
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